Wide-SOA 250 V MDmesh M9, 700 V PowerGaN for AI servers, top-side-cooled package for OBC, and more

 


 
 
Power discretes news
May 2026
 
Power discretes enews
 
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PRODUCT NEWS

700 V PowerGaN shrinks the power stage in AI servers, robotics, and smartgrid

Faster PowerGaN switching downsizes the magnetics and passives that dominate converter size and BOM cost.

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PRODUCT NEWS

250 V MDmesh M9 MOSFET with wide SOA in D2PAK

Low-loss switching and a wide safe operating area for robust DC-DC conversion in 36-80 V bus systems.

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PRODUCT NEWS

Automotive-grade 40 V StripFET F8 MOSFET in a compact package

Lower on-resistance and improved thermal dissipation for automotive motor control and power distribution.

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PRODUCT NEWS

650 V half-bridge IGBT with top-side cooling for OBC designs

Combines IGBTs and freewheeling diodes in the ACEPACK SMIT package, with top-side cooling that keeps heat off the PCB.

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PRODUCT NEWS

1200 V automotive MDmesh K5 in high-creepage H2PAK-2

Enhanced creepage and clearance eliminate the need for coating or potting in high-voltage automotive BMS designs.

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PRODUCT NEWS

1200 V SCRs up to 130 A in TO247HC

High-temperature, high-creepage thyristors for robust industrial power control, rated up to
130 A.

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BOARD NEWS

Evaluate 700 V PowerGaN in buck, boost, PFC, and inverter topologies

The STEVAL-G0807LBCB half-bridge board characterizes the SGT080R70ILB 700 V GaN with tunable gate drive and TIM evaluation.

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Available on request.

 

ST ESTORE

High-efficiency power technologies for industrial and automotive designs

Explore our power MOSFETs, IGBTs, and wide-bandgap transistors.

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ADDITIONAL RESOURCES
 
 
[Digital power guide] Digital control for higher power density and faster loops
See how digital power management handles complex topologies, plus the design tools and reference designs to build it.
 
 
 
 
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