Power Integrations just delivered its 1 millionth
InnoSwitch™3 switcher IC featuring
PowiGaN™ gallium nitride technology!
Less
than two months after announcing PI’s internally developed GaN
technology, CEO Balu Balakrishnan presented the one-millionth
PowiGaN-based IC to Anker Innovations CEO Steven Yang at the Shenzhen
headquarters of Anker, a leading manufacturer of compact USB PD adapters
and other intelligent charging solutions.
→ Watch Mr. Balakrishnan’s
interview with ChargerLab.com at the event.
GaN technology greatly reduces switching losses compared to silicon,
enabling designs of chargers and adapters that are much smaller, lighter
and more efficient.
PowiGaN
switches are seamlessly integrated into the PI’s widely successful
InnoSwitch3 ICs, achieving up to 95% efficiency and 100 W output in
enclosed adapter applications without requiring a heatsink.
Mr.
Balakrishnan said: “We have made our PowiGaN devices very easy to use
with the driving and the protection built-in. It is no different from
using a silicon-based InnoSwitch3 product, except for the increased
performance.”
This stress-free transition from silicon to PowiGaN accelerated the
industry’s first successful mass-market deployment of high-voltage GaN
technology. The million-unit milestone was reached just a few months
after the first shipment of PowiGaN-based switcher ICs.
Mr. Yang said: “By using PowiGaN-based InnoSwitch3 ICs we are able to
offer USB PD chargers that are compact, lightweight and capable of
delivering high power output. We are excited to use this innovative new
technology to help us achieve our goal to charge everything faster.”
Currently, four product families from PI incorporate PowiGaN
technology. Click on the links below to learn more and download the
newest design examples.
