Discover how Nexperia 1200 V SiC MOSFETs raise the bar for safe, robust and reliable power switching

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Nexperia has just introduced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 raise the bar for safe, robust and reliable power switching in industrial applications making them the product of choice for EV charging infrastructure, uninterruptible power supplies, inverters for solar and energy storage systems, and motor drives.

Experience outstanding performance across several parameters, e.g. high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification, and a very well-balanced gate charge ratio.
Giving you best-in-class system benefits:
  • Very low conduction and switching losses
  • Safe and stable switching performance
  • Easy parallel operation
  • Low reverse recovery charge and relaxed dead time requirements
    • Making Nexperia 1200 V SiC MOSFETs a key component in electronic devices for a greener future.
    Regards,
    TeamNexperia


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